Wafer-level light emitting diode structure, light emitting diode chip, and method for forming the same

摘要

A method for fabricating a wafer-level light emitting diode structure is provided. The method includes: providing a substrate, wherein a first semiconductor layer, a light emitting layer, and a second semiconductor layer are sequentially disposed on the substrate; subjecting the first semiconductor layer, the light emitting layer, and the second semiconductor layer with a patterning process to form a first depressed portion, a second depressed portion, a stacked structure disposed on the second depressed portion and a remained first semiconductor layer disposed on the depressed portion, wherein the stacked structure comprises a patterned second semiconductor layer, a patterned emitting layer, and a patterned first semiconductor layer; forming a first electrode on the remained first semiconductor layer of the first depressed portion; and forming a second electrode correspondingly disposed on the patterned second semiconductor layer of the second depressed portion.

主权项

1. A method for fabricating a wafer-level light emitting diode structure, comprising:
providing a growth substrate, wherein a first semiconductor layer, a light emitting layer, and a second semiconductor layer are sequentially disposed on the substrate; subjecting the first semiconductor layer, the light emitting layer, and the second semiconductor layer with a patterning process to form a plurality of first portions and a plurality of second portions, wherein each of the plurality of second portions has a stacked structure and each of the plurality of first portions has an extended portion of the first semiconductor layer, wherein the plurality of first portions overlap with predetermined cutting ranges; forming an first electrode on the extended portion of the first semiconductor layer in each of the plurality of first portions; forming a second electrode on the stacked structure in each of the plurality of second portions; measuring a current-voltage characteristic of the wafer-level light emitting diode structure via the first electrode and the second electrode; and cutting the growth substrate along the predetermined cutting ranges, thus removing each first electrode and obtaining a plurality of light emitting diode chips.