Thin film transistor and display device

摘要

Provided is a thin film transistor capable of improving reliability in the thin film transistor including an oxide semiconductor layer. A thin film transistor including: a gate electrode; a gate insulating film formed on the gate electrode; an oxide semiconductor layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective film formed at least in a region corresponding to the channel region on the oxide semiconductor layer; and a source/drain electrode. A top face and a side face of the oxide semiconductor layer are covered with the source/drain electrode and the channel protective layer on the gate insulating film.

主权项

1. A thin film transistor comprising:
a gate insulating film between an oxide semiconductor layer and a gate electrode, said gate electrode being between said gate insulating film and a substrate; a source/drain electrode in physical contact with a source/drain region of the oxide semiconductor layer and said gate insulating film, said source/drain region being between said gate insulating film and said source/drain electrode; a channel protective film between said source/drain electrode and a different source/drain electrode, a channel region of the oxide semiconductor layer being between said gate insulating film and said channel protective film, wherein said channel protective film comprises a second protective film between a first protective film and a third protective film, said second protective film being in physical contact with said first protective film and said third protective film, wherein said first protective film is in physical contact with said oxide semiconductor layer, said second protective film being in physical contact with said gate insulating film, wherein along every direction within a plan view of a layout, a boundary of the source/drain electrode extends beyond a boundary of the source/drain region.