Semiconductor device

摘要

A first contact, a second impurity region, and a second low-concentration impurity region form a Schottky barrier diode. The second impurity region has the same impurity concentration as those of first impurity regions, and thus can be formed in the same process as forming the first impurity regions. In addition, the second low-concentration impurity region has the same impurity concentration as those of first low-concentration impurity regions, and thus can be formed in the same process as forming the first low-concentration impurity regions.

主权项

1. A semiconductor device comprising:
a substrate; a first impurity region of a first conductivity type, formed in the substrate, which serves as a source and a drain of a transistor; a first low-concentration impurity region of a first conductivity type, formed in the substrate, which serves as an LDD region of the transistor; a second impurity region of a first conductivity type, formed in the substrate, which has the same impurity concentration as that of the first impurity region; a second low-concentration impurity region of a first conductivity type, formed in the substrate, which is connected to the second impurity region and has the same impurity concentration as that of the first low-concentration impurity region; a first contact which is connected to the second impurity region; and a second contact which is connected to the second low-concentration impurity region, wherein an element isolation film is not formed between the first contact and the second contact when seen in a plan view.