P-N diode having a controlled heterostructure self-positioned on HgCdTe, for infrared imagers

摘要

A device including at least one heterostructure p/n diode, including a substrate based on HgCdTe including for each diode: a first part having a first cadmium concentration; a concentrated part, having a second cadmium concentration, greater than the first concentration, forming a heterostructure with the first part; a p+ doped zone situated in the concentrated part and extending into the first part, forming a p/n junction with an n-doped position of the first part, or a base plate; and the concentrated part is only located in the p+ doped zone and forms a substantially constant cadmium concentration well.

主权项

1. A device comprising at least one heterostructure p/n diode, comprising a substrate based on HgCdTe, mostly n-doped, the substrate comprising for each diode:
a first part having a first cadmium concentration; a second part having a second cadmium concentration, greater than the first cadmium concentration, the second part, or concentrated part, forming a heterostructure with the first part; a p+ doped zone, or p doping zone, situated in the concentrated part and extending into the first part, and forming a p/n junction with an n-doped portion of the first part, or a base plate; wherein the concentrated part is only located in the p+ doped zone and forms a substantially constant cadmium concentration well.