发明名称 PATTERN FORMATION METHOD USING A DUAL TONE DEVELOPMENT PROCESS
摘要 A pattern forming method comprises the steps of: forming a dual tone photoresist layer on a support layer; exposing the dual tone photoresist layer by using a mask including a gray feature to form a low exposure area, an intermediate exposure area, and a high exposure area in a first area of the dual tone photoresist layer and to form a low exposure area, and an intermediate exposure area in a second area of the dual tone photoresist layer; removing the dual tone photoresist layer of the high exposure area of the first area through a positive development process to form multiple preliminary patterns in the first area; and removing a dual tone exposure layer of the low exposure area of the first area and the dual tone photoresist layer of the low exposure area of the second area through a negative development process to form multiple first patterns positioned separately in the first area and multiple second patterns positioned separately in the second area.
申请公布号 KR20150122516(A) 申请公布日期 2015.11.02
申请号 KR20140048876 申请日期 2014.04.23
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HWANG, SUNG WOOK;HA, SOON MOK;PARK, JOON SOO
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
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