TFT ION SENSOR, MEASURING METHOD USING THE SAME, AND TFT ION SENSOR INSTRUMENT

摘要

PROBLEM TO BE SOLVED: To solve the problem that an ion sensor using TFT or MOSFET has low measurement sensitivity, and thereby detection of an infinitesimal sensing object material is difficult.SOLUTION: There is provided a TFT ion sensor 101 having a structure having jointly a gate electrode (silicon substrate 11) and a reference electrode 17, capable of detecting highly sensitively the concentration of ion, hormone or the like in a sensing object material 16 from threshold voltage shift of a characteristic of a voltage between gate and source versus a current between source and drain, by enlarging a capacitance of an ion sensitive insulator film 14 more than a capacitance of a gate insulator (thermal oxidation film 10).