| 摘要 |
PROBLEM TO BE SOLVED: To provide a simulation method capable of simulating electrical characteristics of a vertical semiconductor device with high accuracy.SOLUTION: The simulation method is a method of simulating electrical characteristics of a vertical semiconductor device including a drain electrode terminal and a source electrode terminal. The simulation method includes a step to simulate the electrical characteristics of the vertical semiconductor device by using a first function representing a forward current which flows from the drain electrode terminal to the source electrode terminal relevant to an inter-terminal voltage applied across the drain electrode terminal and the source electrode terminal and a second function representing a reverse current which flows from the source electrode terminal and the drain electrode terminal relevant to an inter-terminal voltage. The first function and the second function have a relationship of a reverse function. |
