| 摘要 |
The present invention relates to a high-voltage MOSFET, a manufacturing method thereof, and a method for suppressing sub-threshold hump, the high-voltage MOSFET comprising: a semiconductor substrate which is divided into an isolation area and a channel area; a gate which is formed by partially changing the gate work function in the top corner of the isolation area; and a source and a drain which are formed in the channel area. The manufacturing method comprises: divisionally forming an isolation area and a channel area on a semiconductor substrate; doping ions to a gate formed in the channel area including the isolation area; and ion-injecting impurities in which a gate work function is partially changed, to the top corner in the isolation area. According to the present invention, the gate work function of the high-voltage MOSFET is partially adjusted, to raise threshold voltage of a parasitic transistor, thereby restricting the operation of the parasitic transistor to remove the sub-threshold hump effect, a reverse narrow channel width effect and a mono-channel effect are improved, and thus it is possible to perform element scaling. |
