发明名称 CHIP LEVEL HEAT DISSIPATION USING SILICON
摘要 A semiconductor device has a semiconductor chip comprising: a first silicon substrate having a first surface and a second surface facing the opposite side; the semiconductor device formed on the first surface or the inside of the first surface; a plurality of first contact pads formed on the first surface electrically connected with the semiconductor device; a layer of a heat-conductive material on the second surface; and a plurality of first vias partially formed through the layer of the heat-conductive material.
申请公布号 KR20150122603(A) 申请公布日期 2015.11.02
申请号 KR20150056731 申请日期 2015.04.22
申请人 OPTIZ, INC. 发明人 OGANESIAN VAGE
分类号 H01L23/36;H01L23/373;H01L23/48 主分类号 H01L23/36
代理机构 代理人
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