| 发明名称 |
LIGHT-EMITTING ELEMENT, EPITAXIAL SUBSTRATE FOR LIGHT-EMITTING ELEMENT, METHOD OF MANUFACTURING EPITAXIAL SUBSTRATE FOR LIGHT-EMITTING ELEMENT |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a light-emitting element in which sufficient luminous efficiency is ensured even during high drive current.SOLUTION: A light-emitting element includes an active layer having a multiquantum well structure formed by laminating a well layer 31 composed of InGaN(0<x≤1) and a barrier layer 32 composed of GaN repeatedly and alternately. A plurality of pits P are formed in the well layer while being dispersed to penetrate the well layer, and the barrier layer 32 has a portion to be buried in the pit P formed in the well layer 31 immediately below. |
| 申请公布号 |
JP2015192138(A) |
申请公布日期 |
2015.11.02 |
| 申请号 |
JP20140070915 |
申请日期 |
2014.03.31 |
| 申请人 |
NGK INSULATORS LTD |
发明人 |
KURAOKA YOSHITAKA;ICHIMURA MIKIYA;SUGIYAMA TOMOHIKO |
| 分类号 |
H01L33/32;H01L33/06 |
主分类号 |
H01L33/32 |
| 代理机构 |
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| 主权项 |
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