UNDERFILL MATERIAL, ELECTRONIC COMPONENT ENCAPSULATED BY THE UNDERFILL MATERIAL AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide an underfill material good in flowability at a narrow gap (e.g. gap of 50 μm or less), having high infiltration rate and capable of preventing generation of void during molding and a high reliability flip chip type semiconductor device by reducing thermal stress on a semiconductor chip and a pump by the same.SOLUTION: An underfill material contains (A) an epoxy resin, (B) a curing agent, (C) an inorganic filler. An average particle diameter of the (C) inorganic filler is less than 5 μm and the content thereof is 67 mass% or more and less than 85 mass% based on the total of an underfill material, and viscosity at 110°C is 0.2 Pa s or less.