薄膜电晶体阵列基板及其制造方法;Thin Film Transistor Array Substrate And Manufacturing Method Thereof

摘要

本发明提出一种薄膜电晶体阵列基板及其制造方法，包括：在透光的基板上形成闸极，并在所述闸极上方设置覆盖所述闸极和透光基板的第一绝缘层；在所述第一绝缘层的上方形成IGZO层；对所述IGZO层进行处理，以形成源极和漏极；以及在经过步骤S3处理后的所述IGZO层的上方设置第二绝缘层，对所述IGZO层进行绝缘保护，并在所述第二绝缘层中开设连通至所述IGZO层的接触孔以及在所述接触孔形成电极。由于本发明不需要形成第二金属层，因而避免了形成第二金属层中进行光刻工艺的过程，缩减了工艺流程、提高了工作效率，并减小TFT尺寸。; forming an IGZO layer on the isolation layer; patterning the IGZO layer to form a plurality of source electrodes and drain electrodes; and forming a second isolation layer on the IGZO layer to protect it and making a plurality of contact holes to the IGZO layer for having a plurality of electrodes thereon. Because only one metal layer is applied, the process of the invention is simple, and the thickness of the TFT film is reduced. Transistor array substrate is achieved by using one IGZO layer in patterning process therefor; the present invention can shorten production time and increase productivity.