多晶矽铸锭与来自其的矽晶圆;MULTICRYSTALLINE SILICON BRICK AND SILICON WAFER THEREFROM
摘要
本揭露系提供多晶矽(mc-Si)晶棒,其包含从底部开始至高度100mm的底部分;从高度100mm开始至高度200mm的中间部分;以及从高度200mm开始至顶部的顶部分。在底部分中的非共格晶界之百分比系大于顶部分中的非共格晶界之百分比。本揭露亦提供多晶矽(mc-Si)晶圆。mc-Si晶圆包含非Σ晶界的百分比系约60至约75,以及Σ3晶界的百分比系约12至约25。; and a top portion starting from the height of 200mm to a top. A percentage of incoherent grain boundary in the bottom portion is greater than a percentage of incoherent grain boundary in the top portion. Present disclosure also provides a multicrystalline silicon (mc-Si) wafer. The mc-Si wafer includes a percentage of non-Σ