摘要 |
<p>The invention concerns a method for preparing a metal carbide multilayer coating on at least one surface of a first carbon layer of a substrate, and possibly under said surface inside the first carbon layer, using a reactive melt infiltration method in which the following successive steps (a) to (d) are performed: (a) the surface is brought into contact with a solid metal disilicide MSi2 in which M is selected from hafnium, titanium and tantalum; (b) the substrate and the metal disilicide are heated to a temperature TP which is greater than the metal disilicide melting temperature; (c) a level is observed at temperature TP for a duration sufficient for the metal disilicide to react with the carbon and form a first multilayer coating comprising a dense, continuous layer consisting of SiC, completely covered with a dense, continuous layer consisting of MC; (d) the part provided with the first multilayer coating is cooled; then, at the end of step (d), the following step (e) is optionally performed: (e) a second carbon layer is deposited on the surface of the first multilayer coating; at the end of step (d) or step (e) the further successive steps (f) to (i), similar to steps (a) to (d), are performed or, at the end of step (d) or step (e) a step (j) similar to step (e) is further optionally performed and a layer of SiC is then optionally deposited.</p> |