发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
The present invention provides a semiconductor memory device and a manufacturing method thereof. In the semiconductor memory device, a semiconductor material whose charge mobility is larger than that of silicon is arranged in a channel part of an active pillar. In the method, a semiconductor material with etching resistance, which is relatively strong, is arranged in the non-channel part of the active pillar. |
申请公布号 |
KR20150121766(A) |
申请公布日期 |
2015.10.30 |
申请号 |
KR20140047447 |
申请日期 |
2014.04.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SIM, JAE SUNG;PARK, YOUNG WOO |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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