发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
摘要 Provided are a semiconductor device and a manufacturing method thereof. The semiconductor device includes a first active pin and a second active pin which protrude from a substrate and are extended in a first direction, a first gate structure which is extended on the first active pin in a second direction across the first direction, a second gate structure which is arranged near the first gate structure in the second direction and is extended on the second active pin in the second direction, and a dummy structure which is formed in a space between the first gate structure and the second gate structure.
申请公布号 KR20150121907(A) 申请公布日期 2015.10.30
申请号 KR20140048087 申请日期 2014.04.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, BOK YOUNG;LEE, JEONG YUN;KIM, DONG HYUN;KIM, MYEONG CHEOL;HAN, DONG WOO
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
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