| 摘要 |
The present invention provides a substrate having a function film formed thereon for an EUV mask blank which has a conductive film whose sheet resistance is low and whose surface levelness is excellent. The substrate having a conductive film formed thereon used in manufacture of a reflective mask blank for EUV lithography according to the present invention comprises at least two layers of a layer (a lower layer) wherein the conductive film is formed on a substrate side and a layer (an upper layer) formed on the lower layer. The lower layer of the conductive film is a CrN-based film containing chrome (Cr) and nitrogen (N). The upper layer of the conductive film is a CrON-based film containing Cr, N, and oxygen (O). A sum content percentage of Cr and N of the CrN-based film is 85% or higher, and a composition ratio (an atomic ratio) of Cr to N is Cr : N = 9.5:0.5 to 3:7. A sum content percentage of Cr, N, and O of the CrON-based film is 85% or higher, and a composition ratio (an atomic ratio) of Cr to (N + O) is Cr : (N + O) = 9.5 : 0.5 to 3 : 7. A film thickness of the CrON-based film is 0.5 to 3 nm. A standard deviation of a film thickness distribution of the CrON-based film is 0.18 nm or lower. |
