发明名称 |
SEMICONDUCTOR DEVICE, MODULE, AND ELECTRONIC DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with small parasitic capacitance, and alternatively, to provide a semiconductor device with low power consumption.SOLUTION: A semiconductor device includes a transistor and a capacitive element. The transistor includes a first conductor, a first insulator over the first conductor, a semiconductor including a region overlapping with the first conductor with the first insulator interposed therebetween, a second insulator over the semiconductor, a second conductor including a region overlapping with the semiconductor with the second insulator interposed therebetween, and a third conductor and a fourth conductor including a region in contact with a top surface of the semiconductor. The capacitive element includes a layer formed from the same layer as the first conductor and a layer formed from the same layer as the third conductor and the fourth conductor. |
申请公布号 |
JP2015188064(A) |
申请公布日期 |
2015.10.29 |
申请号 |
JP20150021220 |
申请日期 |
2015.02.05 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;OKAZAKI KENICHI;NAKATA MASATAKA;KATAYAMA MASAHIRO |
分类号 |
H01L29/786;G02F1/1368;H01L21/336;H01L21/8242;H01L27/108;H01L51/50;H05B33/14 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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