发明名称 SEMICONDUCTOR DEVICE, MODULE, AND ELECTRONIC DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device with small parasitic capacitance, and alternatively, to provide a semiconductor device with low power consumption.SOLUTION: A semiconductor device includes a transistor and a capacitive element. The transistor includes a first conductor, a first insulator over the first conductor, a semiconductor including a region overlapping with the first conductor with the first insulator interposed therebetween, a second insulator over the semiconductor, a second conductor including a region overlapping with the semiconductor with the second insulator interposed therebetween, and a third conductor and a fourth conductor including a region in contact with a top surface of the semiconductor. The capacitive element includes a layer formed from the same layer as the first conductor and a layer formed from the same layer as the third conductor and the fourth conductor.
申请公布号 JP2015188064(A) 申请公布日期 2015.10.29
申请号 JP20150021220 申请日期 2015.02.05
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;OKAZAKI KENICHI;NAKATA MASATAKA;KATAYAMA MASAHIRO
分类号 H01L29/786;G02F1/1368;H01L21/336;H01L21/8242;H01L27/108;H01L51/50;H05B33/14 主分类号 H01L29/786
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