| 发明名称 |
Structure and Method for FinFET Device |
| 摘要 |
The present disclosure provides an embodiment of a fin-like field-effect transistor (FinFET) device. The device includes a substrate having a first gate region, a first fin structure over the substrate in the first gate region. The first fin structure includes an upper semiconductor material member, a lower semiconductor material member, surrounded by an oxide feature and a liner wrapping around the oxide feature of the lower semiconductor material member, and extending upwards to wrap around a lower portion of the upper semiconductor material member. The device also includes a dielectric layer laterally proximate to an upper portion of the upper semiconductor material member. Therefore the upper semiconductor material member includes a middle portion that is neither laterally proximate to the dielectric layer nor wrapped by the liner. |
| 申请公布号 |
US2015311336(A1) |
申请公布日期 |
2015.10.29 |
| 申请号 |
US201414458484 |
申请日期 |
2014.08.13 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Ching Kuo-Cheng;Fung Ka-Hing;Chang Chih-Sheng;Wu Zhiqiang |
| 分类号 |
H01L29/78;H01L29/06;H01L29/66;H01L29/165 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A fin-like field-effect transistor (FinFET) device comprising:
a substrate having a first gate region; a first fin structure over the substrate in the first gate region, the first fin structure including:
an upper semiconductor material member;a lower semiconductor material member, surrounded by an oxide feature; anda liner wrapping around the oxide feature of the lower semiconductor material member, and extending upwards to wrap around a lower portion of the upper semiconductor material member; and a dielectric layer laterally proximate to an upper portion of the upper semiconductor material member, wherein the upper semiconductor material member includes a middle portion that is neither laterally proximate to the dielectric layer nor wrapped by the liner. |
| 地址 |
Hsin-Chu TW |
