发明名称 |
SEMICONDUCTOR STRUCTURE AND FABRICATING METHOD THEREOF |
摘要 |
A semiconductor structure and a method for fabricating the same are provided. The semiconductor structure includes a wafer substrate having a top surface and a bottom surface, and a conductive pillar in the wafer substrate defined by a deep trench insulator through the top surface and the bottom surface of the wafer substrate. The method for fabricating the semiconductor structure includes following steps. A deep trench is formed from a top surface of a wafer substrate to define a conductive region in the wafer substrate. The conductive region is doped with a dopant. The deep trench is filled with an insulation material to form a deep trench insulator. And the wafer substrate is thinned from a bottom surface of the wafer substrate to expose the deep trench insulator and isolate the conductive region to form a conductive pillar. |
申请公布号 |
US2015311140(A1) |
申请公布日期 |
2015.10.29 |
申请号 |
US201414262582 |
申请日期 |
2014.04.25 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
KALNITSKY Alexander;TUAN Hsiao-Chin;HUANG Shih-Fen;CHENG Hsin-Li;TSUI Felix Ying-Kit |
分类号 |
H01L23/48;H01L21/265;H01L21/22;H01L21/768 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Hsinchu TW |