发明名称 |
METHOD FOR PROVIDING LATERAL THERMAL PROCESSING OF THIN FILMS ON LOW-TEMPERATURE SUBSTRATES |
摘要 |
A method for thermally processing a minimally absorbing thin film in a selective manner is disclosed. Two closely spaced absorbing traces are patterned in thermal contact with the thin film. A pulsed radiant source is used to heat the two absorbing traces, and the thin film is thermally processed via conduction between the two absorbing traces. This method can be utilized to fabricate a thin film transistor (TFT) in which the thin film is a semiconductor and the absorbers are the source and the drain of the TFT. |
申请公布号 |
US2015311092(A1) |
申请公布日期 |
2015.10.29 |
申请号 |
US201514635729 |
申请日期 |
2015.03.02 |
申请人 |
SCHRODER KURT A.;WENZ ROBERT P. |
发明人 |
SCHRODER KURT A.;WENZ ROBERT P. |
分类号 |
H01L21/428 |
主分类号 |
H01L21/428 |
代理机构 |
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代理人 |
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主权项 |
1. A method for thermally processing a very thin film, said method comprising:
patterning one absorbing trace adjacent to a thin film, wherein said one absorbing traces is made of metal, wherein said thin film is located on top of a substrate; irradiating said absorbing trace with at least one electromagnetic pulse to heat up said absorbing trace; and allowing heat from said absorbing trace to thermally process said very thin film. |
地址 |
COUPLAND TX US |