发明名称 SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF
摘要 A semiconductor memory device includes a fuse array block including a plurality of fuses programmed with state information, an operation direction control block suitable for controlling a program operation direction and a boot-up operation direction of the fuse array block, and a fuse information loading block suitable for loading the state information which is programmed in the plurality of fuses of the fuse array block through the boot-up operation.
申请公布号 US2015310925(A1) 申请公布日期 2015.10.29
申请号 US201414509852 申请日期 2014.10.08
申请人 SK hynix Inc. 发明人 CHO Seon-Ki
分类号 G11C17/18;G11C29/00;G11C17/16 主分类号 G11C17/18
代理机构 代理人
主权项 1. A semiconductor memory device, comprising: a fuse array block including a plurality of fuses programmed with state information; an operation direction control block suitable for controlling a program operation direction and a boot-up operation direction of the fuse array block; and a fuse information loading block suitable for loading the state information which is programmed in the plurality of fuses of the fuse array block through the boot-up operation.
地址 Gyeonggi-do KR