Dynamic Programming Of Advanced Nanometer Flash Memory

摘要

An improved method and apparatus for programming advanced nanometer flash memory cells is disclosed.

主权项

1. A programming circuit for use in a memory device, comprising:
a current mirror comprising a transistor; a capacitor coupled to the gate of the transistor; and a switch coupled to a current source and the capacitor, wherein the current source is coupled to the capacitor through the switch in a first mode and the current source is uncoupled from the capacitor and is coupled to a memory cell during a second mode.