| 摘要 |
The present invention provides a method for polishing a silicon wafer, wherein a silicon wafer is subjected to a mirror polishing step in which: the silicon wafer is subjected to lapping; then the silicon wafer is subjected to a process for removing a metal impurity adhering to the surface of the silicon wafer, in said process the surface of the silicon wafer being subjected to an oxidation treatment using an ozone gas or ozone water and to an oxide film removal treatment using a hydrofluoric acid vapor or aqueous hydrofluoric acid solution; and after that, the silicon wafer is subjected to final polishing. Consequently, occurrence of PID on the silicon wafer during the mirror polishing step can be prevented, thereby providing a method for polishing a silicon wafer and a method for producing an epitaxial wafer, wherein the silicon wafer after the mirror polishing step and an epitaxial wafer, which is obtained by laminating an epitaxial layer thereon in a subsequent step, can be prevented from deterioration in the surface quality, respectively. |
