发明名称 |
COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING METAL NITRIDES |
摘要 |
A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme. |
申请公布号 |
SG10201508015R(A) |
申请公布日期 |
2015.10.29 |
申请号 |
SG10201508015R |
申请日期 |
2011.10.06 |
申请人 |
ENTEGRIS, INC. |
发明人 |
CHEN, TIANNIU;THOMAS, NICOLE E.;LIPPY, STEVEN;BARNES, JEFFREY A.;COOPER, EMANUEL I.;ZHANG, PENG |
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