MANUFACTURING METHOD OF NITRIDE SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To efficiently manufacture a self-supported substrate made of a nitride semiconductor having a low surface dislocation density and a large area.SOLUTION: A first base crystal obtained by an ammonothermal method and made of a nitride semiconductor is prepared and ground to obtain a second base crystal. A plurality of the obtained second base crystals are bonded to obtain a first ground substrate. A first nitride semiconductor layer is formed on the obtained first ground substrate. The formed first nitride semiconductor layer has its periphery removed by grinding and is separated from the first ground substrate to obtain a second ground substrate. A plurality of the second ground crystals are bonded to obtain a third ground substrate, which is ground to obtain a fourth ground substrate. A second nitride semiconductor layer is formed on the obtained fourth ground substrate. The formed second nitride semiconductor layer has its periphery removed by grinding and is separated from the fourth ground substrate to obtain a final substrate. The obtained final substrate is a self-supported substrate.