发明名称 |
LIGHT EMITTING DEVICE |
摘要 |
A light emitting device includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode. |
申请公布号 |
US2015311410(A1) |
申请公布日期 |
2015.10.29 |
申请号 |
US201514745120 |
申请日期 |
2015.06.19 |
申请人 |
NICHIA CORPORATION |
发明人 |
YONEDA Akinori;KINOUCHI Akiyoshi;KASAI Hisashi;AIHARA Yoshiyuki;SASA Hirokazu;NAKAMURA Shinji |
分类号 |
H01L33/56;H01L33/24;H01L33/40;H01L33/50;H01L33/62 |
主分类号 |
H01L33/56 |
代理机构 |
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代理人 |
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主权项 |
1. A light emitting device comprising:
a light emitting element including a p-type semiconductor layer and an n-type semiconductor layer; a p-side electrode disposed on an upper surface side of the light emitting element and on the p-type semiconductor layer; an n-side electrode disposed on an upper surface side of the light emitting element and connected to the n-type semiconductor layer; a resin layer disposed to cover the upper surface and aside surface of the light emitting element; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the light emitting device; a metal component connecting at least one of between the p-side electrode and b the p-side connection electrode and between the n-side electrode and the n-side connection electrode, the metal component being disposed in the resin; and a phosphor layer disposed on a lower surface side of the light emitting element, wherein the phosphor layer contacts with apart of the resin layer covering the side surface of the light emitting element. |
地址 |
Anan-shi JP |