发明名称 LIGHT EMITTING DEVICE
摘要 A light emitting device includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode.
申请公布号 US2015311410(A1) 申请公布日期 2015.10.29
申请号 US201514745120 申请日期 2015.06.19
申请人 NICHIA CORPORATION 发明人 YONEDA Akinori;KINOUCHI Akiyoshi;KASAI Hisashi;AIHARA Yoshiyuki;SASA Hirokazu;NAKAMURA Shinji
分类号 H01L33/56;H01L33/24;H01L33/40;H01L33/50;H01L33/62 主分类号 H01L33/56
代理机构 代理人
主权项 1. A light emitting device comprising: a light emitting element including a p-type semiconductor layer and an n-type semiconductor layer; a p-side electrode disposed on an upper surface side of the light emitting element and on the p-type semiconductor layer; an n-side electrode disposed on an upper surface side of the light emitting element and connected to the n-type semiconductor layer; a resin layer disposed to cover the upper surface and aside surface of the light emitting element; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the light emitting device; a metal component connecting at least one of between the p-side electrode and b the p-side connection electrode and between the n-side electrode and the n-side connection electrode, the metal component being disposed in the resin; and a phosphor layer disposed on a lower surface side of the light emitting element, wherein the phosphor layer contacts with apart of the resin layer covering the side surface of the light emitting element.
地址 Anan-shi JP