发明名称 LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME
摘要 An exemplary embodiment discloses a light emitting diode including a first light emitting cell and a second light emitting cell disposed on a substrate, the first light emitting cell and the second light emitting cell being spaced apart from each other. The light emitting diode also includes a first zinc oxide (ZnO) layer disposed on the first light emitting cell, the first ZnO layer being electrically connected to the first light emitting cell. The light emitting diode also includes a current blocking layer disposed between a portion of the first light emitting cell and the first ZnO layer, an interconnection electrically connecting the first light emitting cell and the second light emitting cell, and an insulation layer disposed between the interconnection and a side surface of the first light emitting cell. The current blocking layer and a first side of insulation layer are connected to each other.
申请公布号 US2015311398(A1) 申请公布日期 2015.10.29
申请号 US201514791824 申请日期 2015.07.06
申请人 SEOUL VIOSYS CO., LTD. 发明人 LEE Seom Geun;KIM Jong Kyu;YOON Yeo Jin;KIM Jae Kwon;KIM Mae Yi
分类号 H01L33/42;H01L33/46;H01L33/08;H01L33/62 主分类号 H01L33/42
代理机构 代理人
主权项 1. A light emitting diode, comprising: a first light emitting cell and a second light emitting cell disposed on a substrate, the first light emitting cell and the second light emitting cell being spaced apart from each other; a first zinc oxide (ZnO) layer disposed on the first light emitting cell, the first ZnO layer being electrically connected to the first light emitting cell; a current blocking layer disposed between a portion of the first light emitting cell and the first ZnO layer; an interconnection electrically connecting the first light emitting cell and the second light emitting cell; and an insulation layer disposed between the interconnection and a side surface of the first light emitting cell, wherein the current blocking layer and a first side of the insulation layer are connected to each other.
地址 Ansan-si KR