SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

摘要

A stopper film, a sacrifice film, and a beam configuration material film are formed by laminating the films in this order on a semiconductor substrate. A cylinder hole that penetrates the stopper film, the sacrifice film, and the beam configuration material film is formed, and a lower electrode that covers the inner surface of the cylinder hole is formed. The beam configuration material film is patterned so as to form a beam that is connected to at least a part of the outer circumferential surface of the lower electrode, thereby exposing a part of the sacrifice film. The sacrifice film is removed by wet etching, and a hollow is formed in the surface of the beam, said hollow being deeper than a hollow formed in the surface of the stopper film.

主权项

1. A semiconductor device manufacturing method comprising:
laminating a stopper film, a sacrificial film, and a beam constituent material film in succession on a semiconductor substrate; forming a cylinder hole that penetrates the stopper film, the sacrificial film, and the beam constituent material film; forming a lower electrode that covers an inner surface of the cylinder hole; patterning the beam constituent material film so as to form a beam that is connected to at least a portion of the external circumferential surface of the lower electrode thereby, exposing a portion of the sacrificial film; and removing the sacrificial film with wet etching and forming a hollow in the surface of the beam that is deeper than a hollow formed in the surface of the stopper film.