ION IMPLANTATION METHOD AND ION IMPLANTATION APPARATUS

摘要

An ion implantation apparatus includes a beam scanner, a beam measurement unit that is able to measure an ion irradiation amount distribution in a beam scanning direction at a wafer position, and a control unit that outputs a control waveform to the beam scanner for scanning an ion beam. The control unit includes an output unit that outputs a reference control waveform to the beam scanner, an acquisition unit that acquires the ion irradiation amount distribution measured for the ion beam scanned based on the reference control waveform from a beam measurement unit, and a generation unit that generates a correction control waveform by using the acquired ion irradiation amount distribution. The control unit outputs the correction control waveform so that the ion irradiation amount distribution becomes a target distribution and the ion irradiation amount distribution per unit time becomes a target value.

主权项

1. An ion implantation method for implanting ions into a wafer by scanning an ion beam in a reciprocating manner while reciprocating the wafer in a direction perpendicular to a beam scanning direction, the ion implantation method comprising:
scanning the ion beam by outputting a reference control waveform to a beam scanner; measuring an ion irradiation amount distribution of the ion beam in the beam scanning direction, wherein the ion beam is scanned based on the reference control waveform; generating a correction control waveform by using the measured ion irradiation amount distribution; and irradiating the ion beam to the wafer by outputting the generated correction control waveform to the beam scanner, wherein the ion beam is scanned based on the correction control waveform, wherein the reference control waveform is a control waveform for scanning the ion beam so that a scanning speed distribution indicating a change value of each beam position in time in the beam scanning direction at a wafer position becomes a first scanning speed distribution and a scanning period becomes a first scanning period, wherein the ion irradiation amount distribution indicates the distribution of the total ion irradiation amount of each beam position in the beam scanning direction at the wafer position when scanning the ion beam over the wafer a predetermined number of times in a reciprocating manner, wherein the correction control waveform is a control waveform for scanning the ion beam so that the scanning speed distribution becomes a second scanning speed distribution and a scanning period becomes a second scanning period, wherein the second scanning speed distribution is a scanning speed distribution for scanning the ion beam so that the ion irradiation amount distribution becomes a target distribution, wherein the second scanning period is a scanning period that is adjusted so that the ion irradiation amount distribution per unit time of the ion beam scanned by the second scanning speed distribution becomes a target value, and wherein the generating the correction control waveform includes: calculating the second scanning speed distribution by using the first scanning speed distribution and the measured ion irradiation amount distribution; and calculating the second scanning period by using the calculated second scanning speed distribution.