| 摘要 |
The plate thickness of an intermediate metal layer (9) present in locations where an interface (11) between a base material (3) and a plating layer (5) is not present is thinner than the plate thickness of an intermetallic compound (13) produced at the interface (11) between the base material (3) and the plating layer (5) and formed from the base material (3) and the plating layer (5); hence, the plating layer (5) is thicker in the locations where the interface (11) is absent and the intermediate metal layer (9) is present than in the locations where the interface (11) between the base material (3) and the plating layer (5) is present. Consequently, when a stationary contact (1) is crushed and deformed, an oxide film (7), which is harder than the plating layer (5), does not deform due to the crushing and instead, is susceptible to the formation of a crack (7a) in the oxide film (7) in the locations where the intermediate metal layer (9) is present. As a result, the terminal contact (1) is electrically connected to a partner-side terminal contact (15) by low resistance, because the tin (Sn) in the plating layer (5) is exposed on the surface (oxide film (7) surface) of the stationary contact (1) through the crack (7a), resulting in the formation of an Ohmic point which contacts the movable contact (15). |
