SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor element achieving improved forward current characteristics and reduced leakage current in the inverse direction.SOLUTION: A semiconductor element 100 includes: first and second second-conductivity-type region groups containing a plurality of second-conductivity-type regions 155 that are disposed in one direction with a space S therebetween in a first silicon carbide semiconductor layer 102 of a first conductivity type, and disposed in parallel to each other; and a first electrode 159 and a second electrode which form a Schottky junction with the first silicon carbide semiconductor layer. The first electrode 159 is disposed to cover a position where a distance from first and second second-conductivity-type regions that are included in the first second-conductivity-type region group and adjacent to each other and a distance from a third second-conductivity-type region that is included in the second second-conductivity-type region group and adjacent to the first and second second-conductivity-type regions are equal. A Schottky barrier between the first electrode and the first silicon carbide semiconductor layer is larger than a Schottky barrier between the second electrode and the first silicon carbide semiconductor layer.