EPITAXIAL WAFER AND SWITCH ELEMENT AND LIGHT-EMITTING ELEMENT USING SAME

摘要

An epitaxial wafer comprises an epitaxial layer disposed on a substrate. The epitaxial layer comprises first to third semiconductor layers. The third semiconductor layer has a thickness that is thicker than that of the first semiconductor layer. A second doping density of the second semiconductor layer is between a first doping density of the first semiconductor layer and a third doping density of the third semiconductor layer.

主权项

1. An epitaxial wafer comprising:
a substrate; and an epitaxial layer on the substrate, wherein the epitaxial layer comprises: a first semiconductor layer disposed on the substrate and having a first doping concentration; a second semiconductor layer disposed on the first semiconductor layer and having a second doping concentration; and a third semiconductor layer disposed on the second semiconductor layer, having a thickness thicker than a thickness of the first semiconductor layer, and having a third doping concentration, and wherein the second doping concentration is between the first doping concentration and the third doping concentration.