| 主权项 |
1. An electronic device including a semiconductor memory unit, the semiconductor memory unit comprising:
one or more columns; and a data line and a data line bar connected with a column selected among the one or more columns, each of the one or more columns including:
a plurality of storage cells each configured to store 1-bit data, each storage cell including a first variable resistance element which has a first resistance value when a first value is stored therein and a second resistance value when a second value is stored therein and a second variable resistance element which has the second resistance value when the first value is stored therein and the first resistance value when the second value is stored therein;a bit line connected to one end of the first variable resistance element;a source line connected to the other end of the first variable resistance element;a bit line bar connected to one end of the second variable resistance element;a source line bar connected to the other end of the second variable resistance element; anda driving block configured to latch data of the data line and the data line bar when a corresponding column is selected, the driving block configured to, in a write operation, drive the bit line and the source line bar with one voltage of a first voltage and a second voltage, and the source line and the bit line bar with another voltage of the first voltage and the second voltage based on a value of the latched data, and the driving block further configured to, in a read operation, latch data corresponding to a current flowing through the bit line and the bit line bar. |
