| 摘要 |
The present invention provides a graphene bending transistor or an electronic component equipped with the graphene bending transistor, the graphene bending transistor being manufactured by performing at least one selected from among a method for manufacturing a single-layer or multi-layer graphene, a method for manufacturing a graphene in which a graphene atomic layer is etched, a face-to-face bonding method, and a method for manufacturing a graphene by direct low-temperature growth on a substrate. |
