METHOD OF MANUFACTURING CU-MG SPUTTERING TARGET FOR USING SEMICONDUCTOR METALLIZATION

摘要

The present invention relates to a method of manufacturing Cu-Mg sputtering target for semiconductor wiring. The method comprises the steps of: filling copper powder and magnesium powder by mixing in a mold made of a graphite material; mounting a mold filled with copper powder and magnesium powder inside of a chamber of a discharge plasma sintering device; creating a vacuum inside the chamber; raising a temperature to a final target temperature while maintaining a first preset pressure to copper powder and magnesium powder within the mold, and raising the temperature in accordance with a preset temperature raising pattern; maintaining the status for one to ten minutes at a final target temperature of the previous step; and cooling an inside of the chamber by reducing the pressure to a second pressure which is preset to a lower pressure than the first pressure. According to the method of manufacturing Cu-Mg sputtering target for semiconductor wiring, higher density can be realized when manufacturing a pellet appropriate for a sputtering target using a discharge plasma sintering process, and the pellet having a homogenous microstructure and high purity with almost no particle growth can be manufactured in a short time using a single process.