| 发明名称 |
OPTICAL SEMICONDUCTOR DEVICE, SEMICONDUCTOR LASER MODULE, AND OPTICAL FIBER AMPLIFIER |
| 摘要 |
An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. |
| 申请公布号 |
US2015311676(A1) |
申请公布日期 |
2015.10.29 |
| 申请号 |
US201514795387 |
申请日期 |
2015.07.09 |
| 申请人 |
FURUKAWA ELECTRIC CO., LTD. |
发明人 |
YOSHIDA Junji;ITOH Hirokazu;IRINO Satoshi;IRIE Yuichiro;SAWAMURA Taketsugu |
| 分类号 |
H01S5/32;H01S5/34;H01S5/20 |
主分类号 |
H01S5/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An optical semiconductor device outputting a predetermined wavelength of laser light comprising:
a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. |
| 地址 |
Tokyo JP |
