发明名称 |
MAGNETIC TUNNEL JUNCTION AND METHOD FOR FABRICATING A MAGNETIC TUNNEL JUNCTION |
摘要 |
An improved magnetic tunnel junction device and methods for fabricating the improved magnetic tunnel junction device are provided. The provided two-etch process reduces etching damage and ablated material redeposition. In an example, provided is a method for fabricating a magnetic tunnel junction (MTJ). The method includes forming a buffer layer on a substrate, forming a bottom electrode on the substrate, forming a pin layer on the bottom electrode, forming a barrier layer on the pin layer, and forming a free layer on the barrier layer. A first etching includes etching the free layer, without etching the barrier layer, the pin layer, and the bottom electrode. The method also includes forming a top electrode on the free layer, as well as forming a hardmask layer on the top electrode. A second etching includes etching the hardmask layer; the top electrode layer, the barrier layer, the pin layer, and the bottom electrode. |
申请公布号 |
US2015311429(A1) |
申请公布日期 |
2015.10.29 |
申请号 |
US201514795799 |
申请日期 |
2015.07.09 |
申请人 |
QUALCOMM Incorporated |
发明人 |
LI Xia;LEE Kangho;CHEN Wei-Chuan;LU Yu;PARK Chando;KANG Seung Hyuk |
分类号 |
H01L43/02;H01L43/12;H01L43/08;G11C11/16 |
主分类号 |
H01L43/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method for fabricating a device, comprising:
fabricating a magnetic tunnel junction, including:
forming a bottom electrode on a substrate;forming a pin layer on the bottom electrode;forming a barrier layer on the pin layer;forming a free layer on the barrier layer;etching the free layer and the barrier layer, without etching the pin layer and the bottom electrode;forming a top electrode on the free layer;forming a hardmask layer on the top electrode; andetching the hardmask layer, the top electrode, the pin layer, and the bottom electrode. |
地址 |
San Diego CA US |