METHOD OF GROWING N-TYPE NITRIDE SEMICONDUCTOR, LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

摘要

A light emitting diode includes: an n-type nitride semiconductor layer; an active layer over the n-type nitride semiconductor layer; and a p-type nitride semiconductor layer over the active layer. The n-type nitride semiconductor layer includes: an n-type nitride layer; a first intermediate layer over the n-type nitride layer; an n-type modulation-doped layer over the first intermediate layer. The light emitting diodes includes a second intermediate layer over the n-type modulation-doped layer. The second intermediate layer includes a sub-layer having a higher n-type doping concentration that an n-type doping concentration of the n-type modulation-doped layer.

主权项

1. A light emitting device comprising:
an n-type nitride semiconductor layer; an active layer disposed over the n-type nitride semiconductor layer; and a p-type nitride semiconductor layer disposed over the active layer, the n-type nitride semiconductor layer comprising:
an n-type nitride base layer;a first intermediate layer disposed over the n-type nitride base layer;an n-type modulation-doped layer disposed over the first intermediate layer; anda second intermediate layer disposed over the n-type modulation-doped layer; wherein the second intermediate layer includes a sub-layer having a higher n-type doping concentration than an n-type doping concentration of the n-type modulation-doped layer.