Resistive Random Access Memory Cells Having Shared Electrodes with Transistor Devices

摘要

Provided are resistive random access memory (ReRAM) cells having extended conductive layers operable as electrodes of other devices, and methods of fabricating such cells and other devices. A conductive layer of a ReRAM cell extends beyond the cell boundary defined by the variable resistance layer. The extended portion may be used a source or drain region of a FET that may control an electrical current through the cell or other devices. The extended conductive layer may be also operable as electrode of another resistive-switching cell or a different device. The extended conductive layer may be formed from doped silicon. The variable resistance layer of the ReRAM cell may be positioned on the same level as a gate dielectric layer of the FET. The variable resistance layer and the gate dielectric layer may have the same thickness and share common materials, though they may be differently doped.

主权项

1. A resistive random access memory (ReRAM) cell comprising:
a first conductive layer; a second conductive layer; and a variable resistance layer;
wherein the first conductive layer and the second conductive layer are operable as electrodes of the ReRAM cell,wherein the variable resistance layer is disposed between the first conductive layer and the second conductive layer;wherein the first conductive layer comprises doped silicon; andthe first conductive layer being operable as an electrode of at least one other device,wherein the first conductive layer is operable as a source or a drain region of a field effect transistor (FET) configured to control a flow of an electrical current through the ReRAM cell, and wherein the FET is one of the two other devices, andwherein a thickness of the variable resistance layer is substantially the same as a thickness of a gate dielectric of the FET.