| 发明名称 |
NANOMETER-SIZE SILICON MATERIAL AND NEGATIVE-ELECTRODE ACTIVE MATERIAL, AND PRODUCTION PROCESS FOR THE SAME AND ELECTRIC STORAGE APPARATUS |
| 摘要 |
A nanometer-size silicon material produced by heat treating a lamellar polysilane exhibits Raman-shift peaks existing at 341±10 cm−1, 360±10 cm−1, 498±10 cm−1, 638±10 cm−1, and 734±10 cm−1 in a Raman spectrum, has a large specific surface area, and has a reduced SiO content. |
| 申请公布号 |
US2015307362(A1) |
申请公布日期 |
2015.10.29 |
| 申请号 |
US201314441883 |
申请日期 |
2013.11.18 |
| 申请人 |
KABUSHIKI KAISHA TOYOTA JIDOSHOKKI |
发明人 |
SUGIYAMA Yusuke;NAKANISHI Masataka;MORI Takashi;MURASE Masakazu;NIIMI Tomohiro;NAKAGAKI Yoshihiro;KOISHI Shigenori;HIRATE Hiroshi |
| 分类号 |
C01B33/021;H01M4/04;C01B33/02;H01M4/38 |
主分类号 |
C01B33/021 |
| 代理机构 |
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代理人 |
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| 主权项 |
1. A production process for nanometer-size silicon material comprising: heat treating a lamellar polysilane obtained by reacting a mixture of hydrogen fluoride (HF) and hydrogen chloride (HCl), and calcium disilicide (CaSi2) one another at a temperature beyond 300° C. under a nonoxidizing atmosphere. |
| 地址 |
Kariya-shi, Aichi JP |
