BONDED SOI WAFER AND METHOD FOR MANUFACTURING BONDED SOI WAFER

摘要

A method for manufacturing a bonded SOI wafer characterized in having a step for depositing a polycrystalline silicon layer onto a bonding surface of a base wafer, a step for polishing the surface of the polycrystalline silicon layer, a step for forming an insulating film on a bonding surface of a bond wafer, a step for bonding the polished surface of the polycrystalline silicon layer of the base wafer and the bond wafer with the insulating film interposed therebetween, and a step for forming an SOI layer by creating a thin film from the bonded bond wafer; the step for depositing the polycrystalline silicon layer further including a stage for forming an oxidized film in advance on the surface on which the polycrystalline silicon layer of the base wafer is deposited using a base wafer having an electrical resistivity of 100 Ω・cm or greater, and the polycrystalline silicon layer deposition being carried out at 900℃ or greater.