| 摘要 |
In order to suppress parasitic inductance that increases in a main terminal connection portion between a semiconductor module and an external bus bar, secure a heat-dissipating path for the connection portion, and ensure easy handling when the semiconductor module is conveyed and assembled to an inverter device, this semiconductor module is characterized in that in a semiconductor module (0) with a plurality of built-in semiconductor switching elements, a high-potential-side power supply terminal (1T) of the semiconductor module (0) and a low-potential-side power supply terminal (2T) of the semiconductor module (0) are formed from surfaces facing each other within the semiconductor module (0). Further, this power converter is characterized by being configured to be provided with the abovementioned semiconductor module. |
