GRAPHENE MANUFACTURING METHOD AND GRAPHENE ATOMIC LAYER ETCHING OF GRAPHENE MANUFACTURING METHOD AND WAFER COMBINATION METHOD OF GRAPHENE BENDNG TRANSISTOR AND GRAPHENE BENDNG TRANSISTOR

摘要

The present invention is a manufacturing method of a transistor for adjusting one or more work functions using graphene comprising an entirely or partially selected impregnation method to select one or more thing among one or more bending modifications and position movements.