发明名称 EPITAXIAL STRUCTURE AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide an epitaxial structure and a manufacturing method of the epitaxial structure.SOLUTION: A manufacturing method of a light emitting diode of the invention includes: a first step where a carbon nanotube film is provided; a second step where defects are formed on surfaces of carbon nanotubes; a third step where a nano material layer is grown on the surfaces of the carbon nanotubes; a fourth step where the carbon nanotube film is removed to form an inorganic insulation nanotube film; a fifth step where the inorganic insulation nanotube film is set on a growth surface of a substrate; and a sixth step where an epitaxial structure layer is grown on the growth surface of the substrate.
申请公布号 JP2015188058(A) 申请公布日期 2015.10.29
申请号 JP20140257212 申请日期 2014.12.19
申请人 QINGHUA UNIV;HON HAI PRECISION INDUSTRY CO LTD 发明人 GI YO;FAN SHOUSHAN
分类号 H01L21/205;C30B25/04 主分类号 H01L21/205
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