发明名称 |
EPITAXIAL STRUCTURE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial structure and a manufacturing method of the epitaxial structure.SOLUTION: A manufacturing method of a light emitting diode of the invention includes: a first step where a carbon nanotube film is provided; a second step where defects are formed on surfaces of carbon nanotubes; a third step where a nano material layer is grown on the surfaces of the carbon nanotubes; a fourth step where the carbon nanotube film is removed to form an inorganic insulation nanotube film; a fifth step where the inorganic insulation nanotube film is set on a growth surface of a substrate; and a sixth step where an epitaxial structure layer is grown on the growth surface of the substrate. |
申请公布号 |
JP2015188058(A) |
申请公布日期 |
2015.10.29 |
申请号 |
JP20140257212 |
申请日期 |
2014.12.19 |
申请人 |
QINGHUA UNIV;HON HAI PRECISION INDUSTRY CO LTD |
发明人 |
GI YO;FAN SHOUSHAN |
分类号 |
H01L21/205;C30B25/04 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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