| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of non-destructively, easily and simply estimating the in-plane distribution of dislocation contained in an SiC plate-like body which is formed of monocrystal of silicon carbide and has a predetermined thickness.SOLUTION: In a method of estimating the in-plane distribution of dislocation in an SiC plate-like body, an X-ray topographic image of the surface of a SiC plate-like body of a reference sample is picked up in advance to obtain contrast information of an image based on the X-ray diffraction intensity, a dislocation density is determined from the number of etch pits per unit area according to an etch pit analysis method using chemical etching to obtain the correlation between the dislocation density and the contrast information, an X-ray topographic image of the surface of an SiC plate-like body of a measurement target sample is picked up, the contrast information of an image based on the X-ray diffraction intensity is converted to a dislocation density on the basis of the correlation, and the in-plane distribution of the dislocation in the SiC plate-like body of the measurement target sample is estimated.</p> |
