| 摘要 |
The purpose of the present invention is to provide a method for processing a single crystal substrate wherein the thickness of the single crystal substrate can be formed efficiently as desired by grinding an upper side of the single crystal substrate, or multiple concave parts can be efficiently formed to be dotted on the surface of the single crystal substrate. The method for processing a single crystal substrate includes: an aperture number setting step of setting a predetermined value as the number of apertures (N/A) of a light focusing lens, which focuses a pulse laser beam, with respect to the single crystal substrate; a closing tunnel formation step of irradiating an upper side of the single crystal substrate with a pulse laser beam after setting a light focusing point of the pulse laser beam on a predetermined location on the upper side of the single crystal substrate, and then forming a closing tunnel by developing fine holes and an amorphous material, which closes the fine holes, on the upper side of the single crystal substrate. |
