Memory devices and methods of making memory devices are shown. Methods and configurations as shown provide folded and vertical memory devices for increased memory density. Methods provided reduce a need for manufacturing methods such as deep dopant implants.
申请公布号
SG10201508076Y(A)
申请公布日期
2015.10.29
申请号
SG10201508076Y
申请日期
2011.06.28
申请人
MICRON TECHNOLOGY, INC.
发明人
TANG, SANH, D.;ZAHURAK, JOHN, K.;VIOLETTE, MICHAEL, P.