发明名称 |
SPUTTERING TARGET MATERIAL FOR PRODUCING INTERMEDIATE LAYER FILM OF PERPENDICULAR MAGNETIC RECORDING MEDIUM AND THIN FILM PRODUCED BY USING THE SAME |
摘要 |
There is disclosed a sputtering target material for producing an intermediate layer film of a perpendicular magnetic recording medium, which is capable of dramatically reducing the crystal grain size of a thin film formed by sputtering. The sputtering target material comprises, in at %, 1 to 20% of W; 0.1 to 10% in total of one or more elements selected from the group consisting of P, Zr, Si and B; and balance Ni. |
申请公布号 |
SG10201506990S(A) |
申请公布日期 |
2015.10.29 |
申请号 |
SG10201506990S |
申请日期 |
2009.04.30 |
申请人 |
SANYO SPECIAL STEEL CO., LTD. |
发明人 |
SAWADA TOSHIYUKI;KISHIDA ATSUSHI;YANAGITANI AKIHIKO |
分类号 |
B22F1/00;B22F3/15;B22F9/08;C22C19/03;C23C14/14;C23C14/34;G11B5/738;G11B5/851 |
主分类号 |
B22F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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