发明名称 SPUTTERING TARGET MATERIAL FOR PRODUCING INTERMEDIATE LAYER FILM OF PERPENDICULAR MAGNETIC RECORDING MEDIUM AND THIN FILM PRODUCED BY USING THE SAME
摘要 There is disclosed a sputtering target material for producing an intermediate layer film of a perpendicular magnetic recording medium, which is capable of dramatically reducing the crystal grain size of a thin film formed by sputtering. The sputtering target material comprises, in at %, 1 to 20% of W; 0.1 to 10% in total of one or more elements selected from the group consisting of P, Zr, Si and B; and balance Ni.
申请公布号 SG10201506990S(A) 申请公布日期 2015.10.29
申请号 SG10201506990S 申请日期 2009.04.30
申请人 SANYO SPECIAL STEEL CO., LTD. 发明人 SAWADA TOSHIYUKI;KISHIDA ATSUSHI;YANAGITANI AKIHIKO
分类号 B22F1/00;B22F3/15;B22F9/08;C22C19/03;C23C14/14;C23C14/34;G11B5/738;G11B5/851 主分类号 B22F1/00
代理机构 代理人
主权项
地址