FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a field effect transistor having excellent withstand voltage performance and high frequency characteristics, by reducing gate current.SOLUTION: A gate electrode 9 embedded in recess structures 10, 11 has a cross sectional shape of an upside-down T shape, and a spatial distance between a channel and a side wall of the gate electrode 9 in the recess structures 10, 11 is made large. Thus, a reduction effect of gate parasitic capacitance and a reduction effect of gate leakage current can be obtained.